KC+CET PYQs for Semiconductor Electronics: Materials, Devices and Simple Circuits with Solutions: Practice KCET Previous Year Questions

Updated on - Feb 16, 2026

Semiconductor Electronics: Materials, Devices and Simple Circuits is an important topic in the Physics section in KCET exam. Practising this topic will increase your score overall and make your conceptual grip on KCET exam stronger.

This article gives you a full set of KCET PYQs for Semiconductor Electronics: Materials, Devices and Simple Circuits with explanations for effective preparation. Practice of KCET Physics PYQs including Semiconductor Electronics: Materials, Devices and Simple Circuits questions regularly will improve accuracy, speed, and confidence in the KCET 2026 exam.

KCET PYQs for Semiconductor Electronics: Materials, Devices and Simple Circuits with Solutions

1.
A positive hole in a semiconductor is
- An anti-particle of electron
- A vacancy created when an electron leaves a covalent bond
- Absence of free electrons
- An artificially created particle
View Solution
2.
The energy gap of an LED is 2.4 eV. When the LED is switched ‘ON’, the momentum of the emitted photons is
- 2.56 × 10^-27 kg.m.s^-1
- 1.28 × 10^-11 kg.m.s^-1
- 0.64 × 10^-27 kg.m.s^-1
- 1.28 × 10^-27 kg.m.s^-1
View Solution
3.
Minority carriers in a $p-type$ semiconductor are
- Holes
- Free electrons
- Both holes and free electrons
- Neither holes nor free electrons
View Solution
4.
The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \, m^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \, m^{-3}$. Now the electron density (in $m^{-3}$) in doped germanium will be
- $1 \times 10^{10}$
- $2 \times 10^{10}$
- $0.5 \times 10^{10}$
- $4 \times 10^{10}$
View Solution
5.
When a p-n junction diode is in forward bias, which type of charge carriers flows in the connecting wire?
- Ions
- Protons
- Holes
- Free electrons
View Solution
6.
Three phtodiodes D₁, D₂, D₃ are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 600 nm?
- D₁ only
- Both D₁ and D₃
- D₂ only
- All the three diodes
View Solution
7.
Identify the logic operation performed by the circuit given here.
- NOT
- NAND
- OR
- NOR
View Solution
8.
In the following circuit, what are P and Q?
- P = 0, Q = 1
- P = 0, Q = 0
- P = 1, Q = 1
- P = 1, Q = 0
View Solution
9.
The forbidden energy gap in $Ge$ is $0.72\, eV$. Given, $hc = 12400 \, eV \, - ?$ . The maximum wavelength of radiation that will generate an electron hole pair is
- $17222\, ?$
- $1722\, ?$
- $172220\, ?$
- $172.2\, ?$
View Solution
10.
In a p-n junction diode notconnected to any circuit
- the potential is the same every where
- the p-type side has a higher potential than the n-type side
- there is an electric field at the junction directed from the n-type side to p-type side
- there is an electric field at the junction directed from the p-type side to n-type side
View Solution
11.
The principle of $LASER$ action involves
- Stimulated emission
- Population inversion
- Amplification of particular frequency emitted by the system
- All of these
View Solution
12.
The conductivity of semiconductor increases with increase in temperature because
- both number density of charge carriers and relaxation time increase
- number density of charge carriers increases
- number density of current carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density
- relaxation time increases
View Solution
13.
An $LED$ is constructed from a $pn$ junction based on a certain semi-conducting material whose energy gap is $1.9\, eV$. Then the wavelength of the emitted light is
- $2.9\times10^{-9} m$
- $1.6\times10^{-8} m$
- $6.5\times10^{-7} m$
- $9.1\times10^{-5} m$
View Solution
14.
The range of electrical conductivity $ \sigma $ and resistivity $ \rho $ for metals, among the following, is:
- $ \rho = 10^{-3} - 10^{8} \, \Omega \, \text{m}, \, \sigma = 10^{-2} - 10^{5} \, \Omega^{-1} \, \text{m}^{-1} $
- $ \rho = 10^{-6} - 10^{3} \, \Omega \, \text{m}, \, \sigma = 10^{2} - 10^{5} \, \Omega^{-1} \, \text{m}^{-1} $
- $ \rho = 10^{-6} - 10^{3} \, \Omega \, \text{m}, \, \sigma = 10^{-10} - 10^{5} \, \Omega^{-1} \, \text{m}^{-1} $
- $ \rho = 10^{-10} - 10^{6} \, \Omega \, \text{m}, \, \sigma = 10^{-10} - 10^{6} \, \Omega^{-1} \, \text{m}^{-1} $
View Solution
15.
In a reverse biased diode when the applied voltage changes by $1\, V$, the current is found to change by $0.5\, \mu\,A$ . The reverse bias resistance of the diode is
- $2 \Omega$
- $200 \Omega$
- $2 \times10^6 \Omega$
- $2\times10^{5} \Omega$
View Solution

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KCET PYQs for Semiconductor Electronics: Materials, Devices and Simple Circuits with Solutions: Practice KCET Previous Year Questions

KCET PYQs for Semiconductor Electronics: Materials, Devices and Simple Circuits with Solutions

1.
A positive hole in a semiconductor is

2.
The energy gap of an LED is 2.4 eV. When the LED is switched ‘ON’, the momentum of the emitted photons is

3.
Minority carriers in a $p-type$ semiconductor are

4.
The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \, m^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \, m^{-3}$. Now the electron density (in $m^{-3}$) in doped germanium will be

5.
When a p-n junction diode is in forward bias, which type of charge carriers flows in the connecting wire?

6.
Three phtodiodes D₁, D₂, D₃ are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 600 nm?

7.
Identify the logic operation performed by the circuit given here.

8.
In the following circuit, what are P and Q?

9.
The forbidden energy gap in $Ge$ is $0.72\, eV$. Given, $hc = 12400 \, eV \, - ?$ . The maximum wavelength of radiation that will generate an electron hole pair is

10.
In a p-n junction diode notconnected to any circuit

11.
The principle of $LASER$ action involves

12.
The conductivity of semiconductor increases with increase in temperature because

13.
An $LED$ is constructed from a $pn$ junction based on a certain semi-conducting material whose energy gap is $1.9\, eV$. Then the wavelength of the emitted light is

14.
The range of electrical conductivity \( \sigma \) and resistivity \( \rho \) for metals, among the following, is:

15.
In a reverse biased diode when the applied voltage changes by $1\, V$, the current is found to change by $0.5\, \mu\,A$ . The reverse bias resistance of the diode is

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KCET PYQs for Semiconductor Electronics: Materials, Devices and Simple Circuits with Solutions

1.A positive hole in a semiconductor is

2.The energy gap of an LED is 2.4 eV. When the LED is switched ‘ON’, the momentum of the emitted photons is

3.Minority carriers in a $p-type$ semiconductor are

4.The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \, m^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \, m^{-3}$. Now the electron density (in $m^{-3}$) in doped germanium will be

5.When a p-n junction diode is in forward bias, which type of charge carriers flows in the connecting wire?

6.Three phtodiodes D1, D2, D3 are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 600 nm?

7.Identify the logic operation performed by the circuit given here.

8.In the following circuit, what are P and Q?

9.The forbidden energy gap in $Ge$ is $0.72\, eV$. Given, $hc = 12400 \, eV \, - ?$ . The maximum wavelength of radiation that will generate an electron hole pair is

10.In a p-n junction diode notconnected to any circuit

11.The principle of $LASER$ action involves

12.The conductivity of semiconductor increases with increase in temperature because

13.An $LED$ is constructed from a $pn$ junction based on a certain semi-conducting material whose energy gap is $1.9\, eV$. Then the wavelength of the emitted light is

14.The range of electrical conductivity \( \sigma \) and resistivity \( \rho \) for metals, among the following, is:

15.In a reverse biased diode when the applied voltage changes by $1\, V$, the current is found to change by $0.5\, \mu\,A$ . The reverse bias resistance of the diode is

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1.
A positive hole in a semiconductor is

2.
The energy gap of an LED is 2.4 eV. When the LED is switched ‘ON’, the momentum of the emitted photons is

3.
Minority carriers in a $p-type$ semiconductor are

4.
The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \, m^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \, m^{-3}$. Now the electron density (in $m^{-3}$) in doped germanium will be

5.
When a p-n junction diode is in forward bias, which type of charge carriers flows in the connecting wire?

6.
Three phtodiodes D₁, D₂, D₃ are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 600 nm?

7.
Identify the logic operation performed by the circuit given here.

8.
In the following circuit, what are P and Q?

9.
The forbidden energy gap in $Ge$ is $0.72\, eV$. Given, $hc = 12400 \, eV \, - ?$ . The maximum wavelength of radiation that will generate an electron hole pair is

10.
In a p-n junction diode notconnected to any circuit

11.
The principle of $LASER$ action involves

12.
The conductivity of semiconductor increases with increase in temperature because

13.
An $LED$ is constructed from a $pn$ junction based on a certain semi-conducting material whose energy gap is $1.9\, eV$. Then the wavelength of the emitted light is

14.
The range of electrical conductivity \( \sigma \) and resistivity \( \rho \) for metals, among the following, is:

15.
In a reverse biased diode when the applied voltage changes by $1\, V$, the current is found to change by $0.5\, \mu\,A$ . The reverse bias resistance of the diode is